Fabrication of p-Type ZnO:N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature
Author:
Funder
National Natural Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/3/236/pdf
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1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature
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