A Power-Gated 8-Transistor Physically Unclonable Function Accelerates Evaluation Speeds
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Published:2023-09-29
Issue:4
Volume:13
Page:53
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ISSN:2079-9268
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Container-title:Journal of Low Power Electronics and Applications
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language:en
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Short-container-title:JLPEA
Author:
Zheng Yujin1ORCID, Yakovlev Alex1ORCID, Bystrov Alex1
Affiliation:
1. Microsystems Group, School of Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK
Abstract
The proposed 8-Transistor (8T) Physically Unclonable Function (PUF), in conjunction with the power gating technique, can significantly accelerate a single evaluation cycle more than 100,000 times faster than a 6-Transistor (6T) Static Random-Access Memory (SRAM) PUF. The 8T PUF is built to swiftly eliminate data remanence and maximise physical mismatch. Moreover, a two-phase power gating module is devised to provide controllable power on/off cycles for the chosen PUF clusters in order to facilitate fast statistical measurements and curb the in-rush current. The architecture and hardware implementation of the power-gated PUF are developed to accommodate fast multiple evaluations of PUF Responses. The fast speed enables a new data processing method, which coordinates Dark-bit masking and Multiple Temporal Majority Voting (TMV) in different Process, Voltage and Temperature (PVT) corners or during field usage, hence greatly reducing the Bit Error Rate (BER) and the hardware penalty for error correction. The designs are based on the UMC 65 nm technology and aim to tape out an Application-Specific Integrated Circuit (ASIC) chip. Post-layout Monte Carlo (MC) simulations are performed with Cadence, and the extracted PUF Responses are processed with Matlab to evaluate the 8T PUF performance and statistical metrics for subsequent inclusion in PUF Responses, which comprise the novelty of this approach.
Subject
Electrical and Electronic Engineering
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