Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers-Reference-Cited by-同舟云学术

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Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Published:2014 Issue:1 Volume:49 Page:25
ISSN:0268-1900
Container-title:International Journal of Materials and Product Technology
language:en
Short-container-title:IJMPT

Author:

Wang Mu Chun,Huang Heng Sheng,Peng Min Ru,Wang Shea Jue,Chen Tsao Yeh,Liao Wen Shiang,Yang Hsin Chia,Liu Chuan Hsi

Publisher

Inderscience Publishers

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,Safety, Risk, Reliability and Quality

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps);Bulletin of Materials Science;2017-08-21

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