Influences of silicon nanowire morphology on its electro-optical properties and applications for hybrid solar cells-Reference-Cited by-同舟云学术

Influences of silicon nanowire morphology on its electro-optical properties and applications for hybrid solar cells

Published:2013-04-24 Issue:6 Volume:21 Page:1400-1410
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Syu Hong-Jhang¹,Shiu Shu-Chia¹,Hung Yung-Jr²,Hsueh Chen-Chih¹,Lin Tzu-Ching³,Subramani Thiyagu¹,Lee San-Liang²,Lin Ching-Fuh

Affiliation:

1. National Taiwan University; Graduate Institute of Photonics and Optoelectronics; Taipei City; Taiwan

2. National Taiwan University of Science and Technology; Department of Electronic Engineering; Taipei City; Taiwan

3. National Taiwan University; Graduate Institute of Electronic Engineering; Taipei City; Taiwan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference37 articles.

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2. High performance silicon nanowire field effect transistors;Cui;Nano Letters,2003

3. Silicon vertically integrated nanowire field effect transistors;Goldberger;Nano Letters,2006

4. High-performance fully depleted silicon nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices;Singh;IEEE Electronic Devices Letters,2006

5. Realization of a silicon nanowire vertical surround-gate field-effect transistor;Schmidt;Small,2006

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