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Wafer-Level Solid-Liquid Interdiffusion Bonding

  • Published:2012-02-08 Issue: Volume: Page:181-214
  • ISSN:
  • Container-title:Handbook of Wafer Bonding
  • language:
  • Short-container-title:

Author:

Hoivik Nils,Aasmundtveit Knut

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Reference50 articles.

1. Partial transient liquid-phase metals layer technique of ceramic-metal bonding;Iino;J. Mater. Sci. Lett.,1991

2. TLP bonding: a new method for joining heat resistant alloys;Duvall;Weld. J.,1974

3. Power device packaging technologies for extreme environments;Johnson;IEEE Trans. Electron. Packaging Manuf.,2007

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1. Au-(In-Bi) and Ag-(In-Bi) Metallic Bonding for Temperature Sensitive Materials;2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC);2022-09-13

2. Finite Element Simulation of Solid–Liquid Interdiffusion Bonding Process: Understanding Process-Dependent Thermomechanical Stress;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-05

3. Intermetallic Bonding for High-Temperature Microelectronics and Microsystems: Solid-Liquid Interdiffusion Bonding;Intermetallic Compounds - Formation and Applications;2018-05-30

4. Wafer-level Cu–Sn micro-joints with high mechanical strength and low Sn overflow;Journal of Micromechanics and Microengineering;2015-08-06

5. High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds;Metallurgical and Materials Transactions A;2015-07-28
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