A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films-Reference-Cited by-同舟云学术

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A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films

Published:2010-03-29 Issue:6-7 Volume:42 Page:1057-1060
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Sygellou L.,Ladas S.,Reading M. A.,van den Berg J. A.,Conard T.,De Gendt S.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. Gate Oxides Beyond SiO2

2. Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

3. Chemical and optical profiling of ultra thin high-k dielectrics on silicon

4. Comparison of hafnium silicate thin films on silicon (100) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

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