30.1: Invited Paper: Device Physics and Compact Modeling of Metal Oxide Thin‐Film Transistors
Author:
Affiliation:
1. Dept. of Electric Engineering Jinan University Guangzhou China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.15938
Reference9 articles.
1. Compact modeling of metal-oxide TFTs based on artificial neural network and improved particle swarm optimization
2. Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction
3. A Surface-Potential-Based DC Model of Amorphous Oxide Semiconductor TFTs Including Degeneration
4. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
5. Low frequency noise in long channel amorphous In–Ga–Zn–O thin film transistors
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