Affiliation:
1. Shandong Technology Center of Nanodevices and Integration, and School of Integrated Circuits Shandong University Jinan China 250101
Abstract
Amorphous InGaZnOx (a‐IGZO) thin‐film transistors (TFTs) fabricated by plasma enhanced atomic layer deposition (PEALD) are currently used in flat‐panel displays due to their beneficial properties[1]. However, the a‐IGZO TFTs with different chemical composition show a huge difference in electrical properties[2]. Therefore, the key to obtaining high‐performance IGZO TFTs is to find the appropriate chemical components, which can ensure high mobility and switching ratio, as well as low subthreshold swing and reasonable threshold voltage. Chemical bond states of a‐IGZO films were analyzed by X‐ray photoelectron spectroscopy (XPS), and reasonable chemical composition IGZO TFTs with vertically stacked InOx, ZnOx, and GaOx atomic layers exhibit excellent performances such as saturation mobility of ~ 70 cm2/(V°s), threshold voltage of 5.02 V, Ion/Ioff ratio of 9.8 × 108, subthreshold swing of 0.53 V/decade. This study illustrates the potential advantages of atomic layer deposition processes for the emerging semiconductor application.
Reference7 articles.
1. Exploration of Chemical Composition of In-Ga-Zn-O System via PEALD Technique for Optimal Physical and Electrical Properties;Hong T.;Advanced Electronic Materials,2023
2. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
3. Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications;Zhu Y.;Journal of Semiconductors, Review,2021
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering;Yabuta H.;Applied Physics Letters, Article,2006
5. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD