Existence analysis for a simplified transient energy-transport model for semiconductors-Reference-Cited by-同舟云学术

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Existence analysis for a simplified transient energy-transport model for semiconductors

Published:2012-11-29 Issue:13 Volume:36 Page:1701-1712
ISSN:0170-4214
Container-title:Mathematical Methods in the Applied Sciences
language:en
Short-container-title:Math. Meth. Appl. Sci.

Author:

Jüngel Ansgar¹,Pinnau René²,Röhrig Elisa³

Affiliation:

1. Institute for Analysis and Scientific Computing; Vienna University of Technology; Wiedner Hauptstraße 8-10; 1040 Wien; Austria

2. Fachbereich Mathematik; Technische Universität Kaiserslautern; Erwin-Schrödinger-Straße; 67663 Kaiserslautern; Germany

3. ITWM; Fraunhofer-Zentrum; Fraunhofer-Platz 1; 67663 Kaiserslautern; Germany

Publisher

Wiley

Subject

General Engineering,General Mathematics

Reference24 articles.

1. Diffusion of hot and cold electrons in semiconductor barriers;Stratton;Physical Review,1962

2. An energy-transport model for semiconductors derived from the Boltzmann equation;Ben Abdallah;Journal of Statistical Physics,1996

3. Time-dependent solutions of a nonlinear system arising in semiconductor theory;Seidman;Nonlinear Analysis,1985

4. On the N-dimensional stationary drift-diffusion semiconductor equations;Fan;Nonlinear Analysis,2001

5. Existence of weak solutions to a degenerate time-dependent semiconductor equations with temperature effect;Guan;Journal of Mathematical Analysis and Applications,2007

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