New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers-Reference-Cited by-同舟云学术

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New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers

Published:1993-08-16 Issue:2 Volume:138 Page:533-546
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Hull R.,Bean J. C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. T. P. Pearsall (Ed.), Semiconductors and Semimetals, Vol. 33 (1991).

2. and , in: Epitaxial Growth, Part b, Ed. Academic Press, New York 1975 (p. 493 to 528).

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