Hydrogenated amorphous boron: Resistivity and doping behavior-Reference-Cited by-同舟云学术

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Hydrogenated amorphous boron: Resistivity and doping behavior

Published:1980-12-16 Issue:2 Volume:62 Page:K185-K188
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Zalph B. L.,Dimmey L. J.,Park H.,Jones P. L.,Cocks F. H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. The Preparation and Properties of Amorphous Silicon

2. Hydrogenated amorphous silicon—a solar cell material

3. A new amorphous silicon-based alloy for electronic applications

4. Substitutional doping of amorphous silicon

5. Electronic properties of substitutionally doped amorphous Si and Ge

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Boron Films;Electric Refractory Materials;2000-08-24

2. Amorphous boron films with enhanced electrical conductivity;Semiconductors;2000-03

3. Refractive indexes of amorphous boron films prepared by plasma deposition;Journal of Physics and Chemistry of Solids;1992-08

4. The Influence of the Bonding Structure on Disorder and Band-Tails in a-B:H;MRS Proceedings;1991

5. Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method;Journal of Applied Physics;1990-05-15

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