Implantation of Aluminium in Silicon. Simultaneous Showing ol Self-Si Defects and of Al Precipitates

Author:

Mathé E. L.,Desoyer J. C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Proc. 13th Internat. Conf. Defects in Semiconductors, Coronado (Calif.) Ed. and , Met. Soc. of AIME, 1984 (p. 129).

2. Early stages of oxygen segregation and precipitation in silicon

3. Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?

4. , , , , , , and . Semiconductor Silicon, Ed. , and , The Electrochemical Society, Pennington 1986 (p. 706).

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1. MeV Al + and Al 2 + ions implantation in Si(100): surface roughness and defects in the bulk;Applied Physics A: Materials Science & Processing;2000-04-01

2. Alloying of a thin Al layer with p-Si under laser irradiation;Semiconductor Science and Technology;1998-11-01

3. 2 MeV aluminum implantation into silicon: radiation damage;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

4. Diffusion and Electrical Behavior of Al Implanted into Capped Si;Journal of The Electrochemical Society;1993-07-01

5. High energy implants of aluminum in Czochralski and floating zone grown silicon substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

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