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Interstitial type defects in ion implanted silicon

  • Published:1983-08-16 Issue:2 Volume:78 Page:K121-K125
  • ISSN:0031-8965
  • Container-title:Physica Status Solidi (a)
  • language:de
  • Short-container-title:Phys. Stat. Sol. (a)

Author:

Berezhnov N. I.,Stelmakh V. F.,Chelyadinskii A. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. EPR study of neutron-irradiated silicon: A positive charge state of the〈100〉split di-interstitial

2. EPR of a〈001〉Si interstitial complex in irradiated silicon

3. , and , Ionnoe legirovanie poluprovodnikov, Energiya, Moscow 1975 (p. 46).

4. Radiation Damage in Semiconductors, Dunod, Paris 1965 (p. 97).

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1. Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-10

2. Defect-impurity engineering in implanted silicon;Physics-Uspekhi;2003-08-31

3. Model of the pair phosphorus atom-interstitial silicon atom;Physics of the Solid State;1998-11

4. Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions;Physics of the Solid State;1998-09

5. Defect production in silicon irradiated with 5.68 GeV Xe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-02
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