Author:
Belz J.,Heidemann K. F.,Kappert H. F.,Te Kaat E.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
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1. Creation of internal point defect drains in silicon by carbon implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
2. Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
3. Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon;Materials Science Forum;1998-02
4. 2 MeV aluminum implantation into silicon: radiation damage;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03
5. MeV metal ion implantations for buried layer fabrication in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02