Measurement of average projective ranges of ions with energies of hundreds and thousands of keV in silicon using the resistance technique-Reference-Cited by-同舟云学术

Measurement of average projective ranges of ions with energies of hundreds and thousands of keV in silicon using the resistance technique

Published:1980-12-16 Issue:2 Volume:62 Page:459-466
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bulgakov Yu. V.,Kolomenskaya T. I.,Kuznetsov N. V.,Yatsenko L. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. and , Stopping Powers and Ranges in All Elemental Matter, Vol. 3, IBM Research, New York 1978.

2. Stopping Powers and Ranges in All Elemental Matter, Vol. 4, IBM Research, New York 1978.

3. Particle-Matter Interactions in Plasma Studies, Gosatomizdat, Moscow 1978 (in Russian).

4. and , Energy Losses and Ranges of Ions in Solids, Izd. BGU, Minsk 1979 (in Russian).

5. , , , and , Projective Ranges and Their Spreads for 1240 Ion-Target Combinations in the Energy Region from 20 to 1000 keV, Viniti Publishers, Dep. N 700–75, Moscow 1974 (in Russian).

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