Spatial distribution profiles of defects in mercury cadmium telluride after ion implantation-Reference-Cited by-同舟云学术

Spatial distribution profiles of defects in mercury cadmium telluride after ion implantation

Published:2004-01 Issue:1-2 Volume:215 Page:109-121
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Voitsekhovskii A.V,Kokhanenko A.P,Shulga S.A,Smith Roger

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference38 articles.

1. Structure of ion‐implanted and annealed Hg1−xCdxTe

2. Ion implantation in Hg1−xCdxTe

3. N.Kh. Talipov, G.A. Kachurin, V.P. Popov, Abstracts of Papers at Third All-Union Conference on Ion-Beam Modification of Semiconductors, Izd.-vo NGU, Novosibirsk, 1991, p. 31 (in Russian)

4. Properties of ion-implanted junctions in mercury—cadmium—telluride

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