Cobalt- and nickel-disilicide formation at twin boundaries in silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
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4. Characterization of haze‐forming precipitates in silicon
5. Tem Study of Metal Impurity Precipitates in the Surface Regions of Silicon Wafers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon;MRS Proceedings;2007
3. Electrical properties and recombination activity of copper, nickel and cobalt in silicon;Applied Physics A: Materials Science & Processing;1998-02-01
4. Nickel Precipitation at the Grain Boundary of a Silicon Bicrystal;Physica Status Solidi (a);1996-05-16
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