Electrical and galvanomagnetic properties of undoped and doped polycrystalline bismuth films. I. Preparation and experimental characterization

Author:

Schnelle W.,Dillner U.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-09

2. Structural Surface Features of Tellurium-Doped Bismuth Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-11

3. Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium;Journal of Nano- and Electronic Physics;2016

4. Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium;Semiconductors;2014-05

5. Classical size behavior of the Nernst-Ettingshausen effect induced by pulsed laser light in bismuth films;Physical Review B;1997-07-15

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