Deep levels in Fe-doped GaP-Reference-Cited by-同舟云学术

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Deep levels in Fe-doped GaP

Published:1979-04-16 Issue:2 Volume:52 Page:653-656
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Demberel L. A.,Popov A. S.,Kushev D. B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Deep levels in Fe-doped InP

2. Double Injection in Deep‐Lying Impurity Semiconductors

3. Deep Impurities in Semiconductors, Wiley Interscience Publishers, New York 1973.

4. and , Current Injection in Solids, Academic Press, New York 1970.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence and deep-level transient spectroscopies of minority carrier traps in GaP: N structures with p-n junctions;Journal of Luminescence;1997-06

2. Photoconductivity Spectra of Fe-Doped GaInP Epitaxial Layers;physica status solidi (a);1990-12-16

3. Photoluminescence and EPR spectra of Fe-doped Ga1−xInxP epitaxial layers;Physica Status Solidi (a);1988-08-16

4. Investigation of the double acceptor FeGa in GaP and GaAs0.1P0.9 by DLTS;Physica B+C;1987-08

5. Deep levels in Fe-doped InP and GaP formed by iron complexes;physica status solidi (a);1986-09-16

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