Investigation of the double acceptor FeGa in GaP and GaAs0.1P0.9 by DLTS-Reference-Cited by-同舟云学术

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Investigation of the double acceptor FeGa in GaP and GaAs0.1P0.9 by DLTS

Published:1987-08 Issue:3 Volume:145 Page:267-280
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Brehme S.,Pickenhain R.

Publisher

Elsevier BV

Subject

General Engineering

Reference72 articles.

1. Transition-metal impurities in III-V compounds

2. Many-electron multiplet effects in the spectra of3dimpurities in heteropolar semiconductors

3. Electronic structure of transition-atom impurities in GaP

4. On the position of energy levels related to transition-metal impurities in III-V semiconductors

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1. Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method;Materials Science in Semiconductor Processing;2017-11

2. Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors;Solid-State Electronics;2014-02

3. An empirical rule for the energy levels of T2+ ions of transition metals in compounds AIIIBV and AIIBVI;Solid State Communications;1992-06

4. Optical absorption of GaP:Fe crystals irradiated with high-energy electrons;Journal of Applied Spectroscopy;1992-05

5. Electron-paramagnetic-resonance identification of transition-metal (Cr,Fe)–shallow-impurity (S,Zn) pairs in GaP;Physical Review B;1992-02-15

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