Effect of Heavy Ion Implantation and Laser Annealing on the Structural Properties of Germanium-Reference-Cited by-同舟云学术

Effect of Heavy Ion Implantation and Laser Annealing on the Structural Properties of Germanium

Published:1986-03-16 Issue:1 Volume:94 Page:371-377
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Khaibullin I. B.,Zakirov G. G.,Zaripov M. M.,Lohneb T.,Pogány L.,Mezey G.,Fried M.,Kótai E.,Pászti F.,Manuaba A.,Gyulai J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. The effects of self‐ion bombardment (30–500 keV) on the surface topography of single‐crystal germanium

3. , and , Dep. VINII Akad. Nauk SSSR, 8449–81 (1981).

4. , , , , and , Proc. Conf. Ion Beam Modification of Materials, Budapest 1978 Ed. , and , Central Research Inst. Phys., Budapest (p. 1341).

5. , , , , and , Extended Abstracts of the Internal. Conf. Ion Implantation in Semiconductors and Materials, Vilnius 1983, Kapsukas Univ., Vilnius (p. 40).

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