Determination of the depth of shallow implanted p+–n junctions by the four-point probe method-Reference-Cited by-同舟云学术

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Determination of the depth of shallow implanted p+–n junctions by the four-point probe method

Published:1996-10-16 Issue:2 Volume:157 Page:393-398
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Kinder R.,Hulényi L.,Mika F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Space charge influence on resistivity measurements

2. Electron Dose Induced Variations in EBIC Line Scan Profiles across Silicon p-n Junctions, 87th Internat. Phys. Conf., London 1987 (p. 721).

3. Recent Developments in the Interpretation of Spreading Resistance Profiles for VLSI‐Technology

4. Determination of Carrier Concentration Profile in Silicon by Capacitance-Voltage Measurements, Research Rep., IMEC vzw, Leuven 1993 (p. 59).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of phosphorus contamination during antimony implantation by measurement and simulation;Applied Surface Science;2006-04

2. Profiling of the p–n Junction in Silicon by the Electrochemical Capacitance–Voltage Technique;physica status solidi (a);1998-10

3. Determination of implanted layer depth in silicon by electrochemical C-V technique;ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)

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