Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice Parameter
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Precision lattice parameter measurements of VPE-GaP-epitaxial layers by the „Umweganregung” method
2. Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent Methods
3. The measurement of single-crystal lattice parameters using a double-diffraction technique
4. A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurements
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Raman scattering study of GaP:N epitaxial layers;Journal of Physics and Chemistry of Solids;1988-01
2. Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors;Journal of Crystal Growth;1986-06
3. Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements;physica status solidi (a);1985-06-16
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