Raman scattering study of GaP:N epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference34 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Localized vibrational modes of light impurities in gallium phosphide. (Absorption spectra)
3. Infrared reflection and Raman scattering of ion‐implanted nitrogen in gallium phosphide
4. Raman Detection of the Nitrogen Localized Mode in GaP:N
5. Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements
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1. MOVPE growth of GaP/GaPN core–shell nanowires: N incorporation, morphology and crystal structure;Nanotechnology;2019-01-14
2. Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH;Nanoscale Research Letters;2018-12
3. Bismuth-induced Raman modes in GaP1−xBix;Japanese Journal of Applied Physics;2016-09-02
4. Raman spectroscopy of GaP/GaNP core/shell nanowires;Applied Physics Letters;2014-11-10
5. Structural and Photoelectrochemical Properties of GaP Nanowires Annealed in NH3;The Journal of Physical Chemistry C;2011-10-24
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