Defect centers in silicon produced by room temperature electron irradiation. I. Optical and photoconductivity studies-Reference-Cited by-同舟云学术

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Defect centers in silicon produced by room temperature electron irradiation. I. Optical and photoconductivity studies

Published:1975-04-16 Issue:2 Volume:28 Page:603-608
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Natarajan K.,Heasell E. L.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Radiation Effects in Semiconductors, Plenum Press, New York 1968 (p. 143).

2. Recombination Luminescence in Irradiated Silicon

3. Thesis, University of Illinois, 1967.

4. and , Radiation Effects in Semiconductors, Gordon & Breach, London/New York/Paris 1971 (p. 213).

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1. Impurity engineering of Czochralski silicon;Materials Science and Engineering: R: Reports;2013-01

2. Local vibrational modes of the metastable dicarbon center(Cs–Ci)in silicon;Physical Review B;1999-09-15

3. Annealing kinetics of the dicarbon radiation-damage center in crystalline silicon;Physical Review B;1991-12-01

4. Annealing Behavior of Reactive Ion Etching Induced Deep Levels;Journal of The Electrochemical Society;1990-05-01

5. The optical properties of luminescence centres in silicon;Physics Reports;1989-05

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