Properties of CVD WSix films and CVD WSix/GaAs schottky barrier-Reference-Cited by-同舟云学术

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Properties of CVD WSix films and CVD WSix/GaAs schottky barrier

Published:1989-06-16 Issue:2 Volume:113 Page:459-466
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Hara T.,Suga A.,Ichikawa R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. , , , , and , Digest Techn. Paper, IEEE Internat. Conf. Solid-State Circuits 1983, Vol. 26, 1983 (p. 44).

2. , and , Digest Techn. Paper IEEE Symp. GaAs IC, IEEE, N.J. 1985 (p. 49).

3. , , , , , , and , Abstracts 4th All-Union Conf. Coherent Interaction of Radiat, (p. 41).

4. Workshop Refractory Metals and Silicides for VLSI IV, San Juan Bautista (CA), May 12 to 15, 1986.

5. Characterization of WSix/GaAs Schottky contacts

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlating CVD Process Parameters and Film Properties;MRS Proceedings;1990

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