Author:
Dashevskii M. Ya.,Filipchenko A. S.,Okun L. S.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Moss-Burstein Effect in n-Type Indium Arsenide Crystals Doped with Different Donor Impurities;Physica Status Solidi (b);1978-05-01
2. Heavily doped crystals of n-type indium antimonide;Physica Status Solidi (a);1975-01-16
3. The Moss-Burstein effect in n-type InSb crystals doped with selenium and tellurium;Physica Status Solidi (a);1972-11-16
4. Indium antimonide (InSb), electron mobility;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
5. Indium antimonide (InSb), carrier concentrations;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties