Heavily doped crystals of n-type indium antimonide-Reference-Cited by-同舟云学术

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Heavily doped crystals of n-type indium antimonide

Published:1975-01-16 Issue:1 Volume:27 Page:11-26
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Filipchenko A. S.,Nasledov D. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Voprosi elektronnoi teorii silno legirovannikh poluprovodnikov, Izd. VINITI, Moskva 1965 (p. 129).

2. Silno legirovannye poluprovodniki, Fizmatgiz, Moskva 1967.

3. Band structure of indium antimonide

4. On the Second Conduction Band in Indium Antimonide

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination radiation from heavily-doped n-type indium antimonide crystals;physica status solidi (a);1990-09-16

2. Effect of hydrostatic pressure on resistivity of InSb thin films heavily doped with group VI elements;Thin Solid Films;1989-07

3. Effect of tin doping on InSb thin films;Thin Solid Films;1989-05

4. Investigation of the InSb(110)-Sn schottky barrier by means of electron energy loss spectroscopy;Surface Science;1987-10

5. Doping of InSb thin films with elements of groups II and VI;Thin Solid Films;1986-09

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