Photoelectric and optical properties of phosphorus-doped Zn1–xMgxTe
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys
2. Luminescence and electrical properties of MgxZn1-xTe alloys
3. Band Structure of MgxZn1-xTe Alloys
4. Photoluminescence and optical properties of Mg x Zn1−x Te alloys
5. Photoluminescence and Optical Properties of Lithium-Doped Mgx Zn1−x Te Alloys
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Zn1−xMgxTe and P:Zn1−xMgxTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method;CrystEngComm;2024
2. Phosphorus impurities in MgxZn1−xTe alloys;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-11
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