Ellipsometrical study of indium sulfide film growth process on InP-Reference-Cited by-同舟云学术

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Ellipsometrical study of indium sulfide film growth process on InP

Published:1994-05-16 Issue:1 Volume:143 Page:71-78
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Sysoev B. I.,Linnik V. D.,Titov S. A.,Kordenko O. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures

2. Photoluminescence study of sulfide layers onp‐type InP

3. Sulfur as a surface passivation for InP

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, morphologic and optical characterization of In(2−x)Al x S3;Applied Physics A;2014-04-11

2. Optical study of zinc blend SnS and cubic In2S3:Al thin films prepared by chemical bath deposition;Journal of Materials Science;2011-05-24

3. Structure, surface composition, and electronic properties of β-In2S3 and β-In2−xAlxS3;Journal of Applied Physics;2001-03

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