Electrical and Optical Properties of Amorphous Ge1−xSix Semiconductors-Reference-Cited by-同舟云学术

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Electrical and Optical Properties of Amorphous Ge1−xSix Semiconductors

Published:1989-07-16 Issue:1 Volume:114 Page:K45-K48
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Ya. Bakirov M.,Nayafov B. A.,Mamedov V. S.,Madatov R. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. , and , Proc. 18th IEEE Photovoltaic Specialists Conf., Las Vegas (Nevada), October 21 to 25, 1985, New York 1985 (p. 894).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of Amorphous S0.60Ge0.40:Hx Films;Inorganic Materials;2005-07

2. Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen;Journal of Applied Spectroscopy;2005-05

3. Electrical properties of hydrogenated amorphous Ge0.90Si0.1:Hx films;Semiconductors;2000-11

4. Universal regularities of charged carrier transfer in disordered materials;Glass Physics and Chemistry;2000-07

5. Electrical Properties of Hydrogenated Amorphous Si1-xGexThin Films;Acta Physica Polonica A;1991-02

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