Electrical properties of hydrogenated amorphous Ge0.90Si0.1:Hx films-Reference-Cited by-同舟云学术

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Electrical properties of hydrogenated amorphous Ge0.90Si0.1:Hx films

Published:2000-11 Issue:11 Volume:34 Page:1330-1333
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Nadzhafov B. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1325433.pdf

Reference17 articles.

1. G. Nakamura, K. Sato, Y. Yukimoto, et al., Jpn. J. Appl. Phys. 20, 291 (1981).

2. P. K. Banerjee, R. Dutta, and S. S. Mitra, J. Non-Cryst. Solids 50, 11 (1983).

3. F. S. Nasredinov, A. A. Andreev, O. A. Golikova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1871 (1983) [Sov. Phys. Semicond. 17, 1196 (1983)].

4. B. A. Najafov, M. Ya. Bakinov, and V. S. Mamedov, Phys. Status Solidi A 123, 67 (1991).

5. A. F. Khokhlov, A. I. Mashin, A. V. Ershov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 19, 2204 (1985) [Sov. Phys. Semicond. 19, 1360 (1985)].

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1. Solar energy converters based on a-Si0.80Ge0.20:H films;International Journal of Sustainable Energy;2007-09

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