Recombination of impact ionized excess carriers in n-type and p-type indiumantimonide-Reference-Cited by-同舟云学术

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Recombination of impact ionized excess carriers in n-type and p-type indiumantimonide

Published:1972-08-16 Issue:2 Volume:12 Page:477-481
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Baumgart H.-D.,Nimtz G.,Kokoschinegg P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Carrier Lifetime in Indium Antimonide

2. Recombination of Impact Ionized Excess Carriers in Tellurium

3. InSb Carrier Lifetime in High Electric Field

4. The capture of hot electrons by Au-and Au2-centres in germanium at 20 K

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact ionisation inn-Type InSb at 77 K;Applied Physics A Solids and Surfaces;1983-03

2. Electron runaway in strong E perpendicular to H fields and breakdown in n-InSb;Journal of Physics C: Solid State Physics;1980-11-30

3. Recombination in narrow-gap semiconductors;Physics Reports;1980-08

4. Theory of the negative photoconductivity in crossed fields;Applied Physics;1976-10

5. Recombination coefficients in extrinsicn-InSb;Zeitschrift f�r Physik B Condensed Matter and Quanta;1976-03

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