Impact ionisation inn-Type InSb at 77 K

Author:

Welzenis R. G.,Zeeuw W. C.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Reference53 articles.

1. A.R. Beattie: J. Phys. Chem. Solids23, 1049 (1962)

2. R.G. van Welzenis: Appl. Phys. A26, 157 (1981)

3. P. Weissglas: InMicrowave Devices, Device Circuit Interactions, ed. by M.J. Howes and D.V. Morgan. (Wiley, London 1976) Chap. 3

4. S.M. Sze:Physics of Semiconductor Devices, 2nd ed., (Wiley, New York 1981)

5. A.G. Chynoweth: InSemiconductors and Semimetals IV, ed. by R.C. Willardson and A.C. Beer. (Academic Press, New York 1968) Chap. 3

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3. Self-Consistent 2-D Monte Carlo Simulations of InSb APD;IEEE Transactions on Electron Devices;2005-10

4. Hot phonon effects on impact ionization dynamics in InSb;Solid State Communications;1990-01

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