Threshold Current Optimization of Ingaasp/InP Lasers with Waveguiding Layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Double peak spectra in spontaneous edge electroluminescence;Solid-State Electronics;1993-11
2. On the hot‐carrier effects in 1.3 μm InGaAsP diodes;Journal of Applied Physics;1993-06
3. Preparation of High-quality InGaAsP/InP Heterostructures for Edge-emitting 1.3 μm LED's;Crystal Research and Technology;1993
4. Analysis of the light-current relationships in the optimized planar buried mesa ridge (PBMR) InGaAsP laser;Czechoslovak Journal of Physics;1992-05
5. LPE Growth of GaInAsP/InP Heterostructures for 1.3 μm Planar Buried Mesa Lasers;Crystal Research and Technology;1992
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