Preparation of High-quality InGaAsP/InP Heterostructures for Edge-emitting 1.3 μm LED's-Reference-Cited by-同舟云学术

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Preparation of High-quality InGaAsP/InP Heterostructures for Edge-emitting 1.3 μm LED's

Published:1993 Issue:1 Volume:28 Page:19-27
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Novotný J.,Vyhnalík L.,Zelinka J.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. : Heterostructure Lasers, Part A, Academic Press, New York 1978

2. , , , : IEEE Trans. on Electr. Dev. ED-30 (1983) 354

3. High-Speed Digital Lightwave Communication Using LEDs and PIN Photodiodes at 1.3 μm

4. Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAsP/InP heterostructure doped by cobalt;CRYST RES TECHNOL;2000

2. LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas;Sensors and Actuators A: Physical;1997-07

3. Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas;Journal of Crystal Growth;1997-04

4. Au - Be/Ru/Au multilayer metallization as a stable ohmic contact scheme to p-type InP;Semiconductor Science and Technology;1996-07-01

5. Low-temperature LPE Overgrowth of InGaAs/InP Mesa Heterostructure;Crystal Research and Technology;1993

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