Kinetics and Mechanism of Plasma Nitridation of Thin Aluminium Films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. To the kinetics and mechanism of magnesium nitridation in a dc discharge
2. Plasma nitriding and ion plating with an intensified glow discharge
3. Plasma‐enhanced thermal nitridation of silicon
4. Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal‐insulator‐silicon diodes
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1. Influence of dispersion aluminum powders on the regularities of their interaction with nitrogen;Russian Journal of Physical Chemistry A;2011-05-25
2. Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report);Pure and Applied Chemistry;2004-01-01
3. Recent progress in plasma nitriding;Vacuum;2000-12
4. AlN formation by direct nitrogen implantation using a DECR plasma;Surface and Coatings Technology;2000-03
5. Fundamental and applied aspects of the plasma-assisted nitriding process for aluminium and its alloys;Surface and Coatings Technology;1997-10
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