X-ray structure amplitudes for GaAs and InP
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
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1. Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-06-16
2. The influence of a hydride preflow on the crystalline quality of InP grown on exactly oriented (100)Si;Journal of Electronic Materials;1992-12
3. Structural Analysis of InP Films Grown on (100)Si Substrates;Physica Status Solidi (a);1992-07-16
4. Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP;Physica B: Condensed Matter;1992-06
5. Measurement of Harmonic Reflections - An X-Ray Method for Real Structure Analysis of Semiconducting Compounds;Physica Status Solidi (a);1992-02-16
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