Structural Analysis of InP Films Grown on (100)Si Substrates-Reference-Cited by-同舟云学术

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Structural Analysis of InP Films Grown on (100)Si Substrates

Published:1992-07-16 Issue:1 Volume:132 Page:115-125
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bugiel E.,Zaumseil P.,Lubnow A.,Wehmann H.-H.,Schlachetzki A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. and , Proc. 4th GADEST, Ed. Sci.-Techn. Publ., Vaduz (FL) 1991.

2. Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation

3. , , , and , accepted for publication in Japan. J. appl. Phys.

4. Initial Growth Mechanism of GaAs on Si(110)

5. Generation and propagation of threading dislocations in GaAs grown on Si

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elastic and anelastic properties of Fe-doped InP films on silicon cantilevers;Journal of Applied Physics;2002-06

2. GaAs and InP on Si with InGaP Buffer Layers;Heterostructure Epitaxy and Devices — HEAD’97;1998

3. High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy;Journal of Crystal Growth;1997-02

4. Xtem Sample Preparation for Failure Analysis in Semiconductor Devices Using High Energy Ion Beam Thinning;MRS Proceedings;1997

5. Photoreflectance Study on the Effect of Lattice Defects in InP on (001) Si;Japanese Journal of Applied Physics;1996-08-15

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