Author:
Wagner G.,Gottschalch V.,Franzheld R.,Kriegel S.,Paufler P.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
2. in: Epitaxial Growth, Part B, Chap. 8, Ed. Academic Press, New York 1975.
3. and , in: Dislocations in Solids, Vol. 8, North-Holland Publ. Co., 1989 (pp. 421 to 460).
4. Generation of misfit dislocations in semiconductors
5. Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献