Strain relief by long line defects in tensile GaxIn1−xP layers grown on InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1412587
Reference10 articles.
1. Effects of InGaP heteropassivation on reliability of GaAs HBTs
2. Defects in epitaxial multilayers
3. Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
4. Determination of strain in epitaxial semiconductor layers by high-resolution X-ray diffraction
5. Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1−xInxP layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature;Journal of Applied Physics;2016-05-21
2. Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates;Applied Physics Letters;2004-10-18
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