Investigation of Low-Temperature Epitaxial Regrowth of Ion-Implanted Amorphous GaAs-Reference-Cited by-同舟云学术

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Investigation of Low-Temperature Epitaxial Regrowth of Ion-Implanted Amorphous GaAs

Published:1989-01-16 Issue:1 Volume:111 Page:59-70
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Herold J.,Bartsch H.,Wesch W.,Götz G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

2. Damage annealing behavior of Se implanted GaAs

3. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs

4. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors

5. Solid phase regrowth of low temperature Be‐implanted GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diode structures from amorphous low-temperature GaAs;Journal of Electronic Materials;1993-12

2. Low temperature recrystallization of ion implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

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