On the Diffusion Profile of Boron in Silicon at High Concentrations
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Profile Estimation of High‐Concentration Arsenic Diffusions in Silicon
2. Boron Diffusion in Silicon‐Concentration and Orientation Dependence, Background Effects, and Profile Estimation
3. Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAs
4. Numerical Solution of Fick's Equation with Concentration‐Dependent Diffusion Coefficients
5. Boron Predeposition in Silicon Using BBr3
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1. ANALYTICAL MODELING AND SIMULATION OF THE CHEMICAL ETCHING PROCEss OF THE BORON-DOPED SILICON LAYERS FROM BBr3 SOURCE in the micromachining technology;Annals of the Academy of Romanian Scientists Series on Science and Technology of Information;2021
2. Mathematical modelling of concentration profiles for species transport through the single and the interconnected multiple-compartment systems;Journal of the Nigerian Society of Physical Sciences;2020-05-14
3. Approximate analytical solutions of a nonlinear diffusion equation;Technical Physics Letters;2006-10
4. Contribution of Diffusion Interstitial Injection to Gettering of Metallic Impurities in Silicon;Journal of The Electrochemical Society;1996-01-01
5. References;Thin Films by Chemical Vapour Deposition;1990
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