Influence of the thickness of damaged layers on the migration of dopands during laser annealing in implanted silicon

Author:

Dvurechenskii A. V.,Mustafin T. N.,Smirnov L. S.,Geiler H.-D.,Götz G.,Jahn U.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. , and , Internat. Conf. Ion Implantation in Semicond., Reinhardsbrunn (GDR) 1977.

2. A melting model for pulsing‐laser annealing of implanted semiconductors

3. Dopant segregation in silicon by pulsed-laser annealing: A test case for the concept of thermal melting

4. , and , Proc. Internat. Conf. Laser Effects in Implanted Semiconductors, Catanai 1978 (p. 184).

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