The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)-Reference-Cited by-同舟云学术

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The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing)

Published:2017 Issue: Volume: Page:367-381
ISSN:
Container-title:Advances in Semiconductor Nanostructures
language:
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Author:

Dvurechenskii A.V.

Publisher

Elsevier

Reference24 articles.

1. Ion Implantation in Semiconductors (Silicon and Germanium);Mayer,1970

2. A Survey of Semiconductors Radiation Techniques;Bolotov,1983

3. Ion Implantation and Synthesis of Materials;Nastasi,2006

4. Local laser annealing of ion-implanted semiconductor layers;Shtyrkov;Semiconductors,1976

5. Annealing of radiation defects with pulsed laser irradiation;Kachurin;Semiconductors,1975

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1. Laser annealing of epitaxial CaF2 films on Si;Thin Solid Films;2021-10

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