General transport theory of noise in p–n junction-like devices. III. Junction noise in p+–n diodes at high injection

Author:

Min H. S.,van Vliet K. M.,van der Ziel A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Fluctuation Phenomena in Semiconductors, Butterworths, London 1959.

2. Accurate noise measurements on transistors

3. General Transport Theory of Noise in p–n Junction-Like Devices, Part I: Three-Dimensional Green's Function Formulation, Solid State Electronics, (in the press).

4. and , IRE Trans. Electron Devices, Part II: Carrier Correlations and Fluctuations for High Injection, Solid State Electronics (in the press).

5. Shot and Thermal Noise in Germanium and Silicon Transistors at High-Level Current Injections

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1. Spatial localization of 1/f noise sources in AlSb/InAs high-electron-mobility transistors;Journal of Applied Physics;2009-08

2. Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications;IEEE Transactions on Electron Devices;2003-03

3. Theory of Transport Noise in Semiconductors;physica status solidi (b);1981-07-01

4. Noise in Solid State Devices;Advances in Electronics and Electron Physics Volume 46;1978

5. Limiting Noise in Solid State Devices;Noise in Physical Systems;1978

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