Electric Conductivity of TlInS2, and TlGaSe2, Crystals in the Region of Phase Transitions-Reference-Cited by-同舟云学术

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Electric Conductivity of TlInS2, and TlGaSe2, Crystals in the Region of Phase Transitions

Published:1987-08-16 Issue:2 Volume:102 Page:K109-K112
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Aliev V. A.,Bagirzade E. F.,Gasanov N. Z.,Guseinov G. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. About a Group of Three-Component Compounds being Analogous to Binary Semiconductors of the AIII BVI Type

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectrical properties of TlGaSe2 single crystals;Solid State Sciences;2014-07

2. Characteristics of traps in TlInS2 single crystals;Current Applied Physics;2013-11

3. Trapping levels in TlGaSe2 single crystals;Journal of Alloys and Compounds;2013-07

4. Anomalies in the electrophysical, thermal, and elastic properties of layered ferroelectric semiconductor TlGaSe2: Instability in the electronic subsystem;Physics of the Solid State;2008-07

5. Electronic properties and phase transitions in low-dimensional semiconductors;Journal of Physics: Condensed Matter;2008-07-01

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