Characteristics of traps in TlInS2 single crystals
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference40 articles.
1. Core-level X-ray photoemission spectral shift through the successive phase transitions in layered TlInS2
2. Polytypes of monoclinic TlInS2
3. Thermal hysteresis and memory effects in TIInS2
4. Phase transitions and incommensurability in the layered semiconductor TlInS2—an NMR study
5. Memory effect in layered semiconductor TlInS2 with incommensurate phase
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1. The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects;Semiconductor Science and Technology;2024-02-15
2. Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe2 Single Crystal;Physics of the Solid State;2020-04
3. Carrier dynamics in highly excited TlInS2: evidence of 2D electron–hole charge separation at parallel layers;Physical Chemistry Chemical Physics;2019
4. Composition-tuned optical absorption and luminescence of TlGaxIn1-xS2 layered mixed crystals at T = 10 K;Optical Materials;2018-10
5. Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors;Physica B: Condensed Matter;2017-12
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