Precipitation of implanted xenon in silicon-Reference-Cited by-同舟云学术

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Precipitation of implanted xenon in silicon

Published:1985-12-16 Issue:2 Volume:92 Page:511-516
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Templier C.,Boubeker B.,Garem H.,Mathé E. L.,Desoyer J. C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. On the migration of helium bubbles

2. Pressure of Neon, Argon, and Xenon Bubbles in Aluminum

3. , , and , to be published.

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage in Xe-implanted 4H-SiC under severe conditions;Journal of Nuclear Materials;2022-11

2. Comparing Xe + pFIB and Ga + FIB for TEM sample preparation of Al alloys: Minimising FIB‐induced artefacts;Journal of Microscopy;2020-12-24

3. Molecular dynamics simulation on the effect of dislocation structures on the retention and distribution of helium ions implanted into silicon;Nanotechnology and Precision Engineering;2020-06

4. Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope;Physical Review B;2018-03-07

5. Strain buildup in 4H-SiC implanted with noble gases at low dose;Materials Today: Proceedings;2018

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