Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystals

Author:

Geiler H.-D.,Götz G.,Klinge K.-D.,Triem N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. , , , and , Internat. Conf. Ion Implantation in Semiconductors, Budapest 1975 (p. 263).

2. , , , , and , Internat. Conf. Ion Implantation in Semiconductors, Budapest 1975 (p. 212).

3. Ed., Channeling, London 1973.

4. Theory of recombination-enhanced defect reactions in semiconductors

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