Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystals-Reference-Cited by-同舟云学术

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Investigation of laser induced diffusion and annealing processes of arsenic-implanted silicon crystals

Published:1977-06-16 Issue:2 Volume:41 Page:K171-K173
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Geiler H.-D.,Götz G.,Klinge K.-D.,Triem N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. , , , and , Internat. Conf. Ion Implantation in Semiconductors, Budapest 1975 (p. 263).

2. , , , , and , Internat. Conf. Ion Implantation in Semiconductors, Budapest 1975 (p. 212).

3. Ed., Channeling, London 1973.

4. Theory of recombination-enhanced defect reactions in semiconductors

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1. Introduction;Flash Lamp Annealing;2019

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3. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01

4. The As−Si (Arsenic-Silicon) system;Bulletin of Alloy Phase Diagrams;1985-06

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